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規(guī)格型號 |
RY50N06C |
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產(chǎn)品參數(shù) |
電壓:60V,電流:50A,Vgs:10V,Rds:0.02Ω |
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產(chǎn)品品牌 |
日月辰 |
產(chǎn)品封裝 |
TO-251 |
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詳細(xì)說明 |
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RY50N06C TO-251
Description
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1) VDS=60V,ID=50A,RDS(ON)< 20mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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