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RY59N10C

發(fā)布者：日月辰科技

	規(guī)格型號	RY59N10C

	產(chǎn)品參數(shù)	電壓：100V，電流：59A，Vgs：20V，Rds：0.015Ω

	產(chǎn)品品牌	日月辰	產(chǎn)品封裝	TO-220

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詳細(xì)說明

RY59N10C TO-220封裝

Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) VDS=100V,ID=59A,RDS(ON)<15mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

產(chǎn)品PDF資料下載：

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